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| European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 18 screwing depth max. 8 61,5 M8 31,5 130 114 C C E E E C 7 28 16,5 G M4 2,5 18,5 external connection to be done C C C G E E E external connection to be done A15/97 Mod-E/ 21.Jan 1998 G.Schulze FZ 1200 R 12 KF4 Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prufspannung Hochstzulassige Werte / Maximum rated values collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage VCES IC ICRM Ptot VGE IF IFRM VISOL min. 4,5 typ. 2,7 3,3 5,5 90 16 100 0,7 0,8 0,9 1,0 0,10 0,15 170 190 1200 1200 2400 7800 20 1200 2400 2,5 max. 3,2 3,9 6,5 200 400 400 V A A W V A A kV tp=1 ms tC=25C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sattigungsspannung Gate-Schwellenspannung Eingangskapazitat Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=1,2kA, vGE=15V, t vj=25C iC=1,2kA, vGE=15V, t vj=125C iC=48mA, vCE=vGE, tvj=25C fO=1MHz,tvj=25C,vCE=25V, v GE=0V vCE=1200V, vGE=0V, t vj=25C vCE=1200V, vGE=0V, t vj=125C vCE=0V, v GE=20V, tvj=25C vCE=0V, v EG=20V, tvj=25C iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA,vCE=600V vL = 15V, R G = 0,82 , tvj=25 vL = 15V, R G = 0,82 , tvj=125 iC=1,2kA, vCE=600V, L s=70nH vL=15V,R G=0,82 ,T vj=125C iC=1,2kA, vCE=600V, L s=70nH vL=15V,R G=0,82 ,T vj=125C vCE sat vGE(th) Cies iCES iGES iEGS ton V V V nF mA mA nA nA ts - - s - s - s - s - s - s - mWs - mWs Speicherzeit (induktive Last) storage time (inductive load) Fallzeit (induktive Last) fall time (inductive load) tf Einschaltverlustenergie pro Puls Abschaltverlustleistung pro Puls turn-on energy loss per puls turn-off energy loss per puls Eon Eoff Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaspannung Ruckstromspitze forward voltage peak reverse recovery current iF=1,2kA, vGE=0V, t vj=25C iF=1,2kA, vGE=0V, t vj=125C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/s, tvj = 25C t vj = 125C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/s, tvj = 25C tvj = 125C vF IRM 2,2 2,0 400 700 50 150 2,7 V 2,5 V -A -A - As - As Sperrverzogerungsladung recovered charge Qr Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand Ubergangs-Warmewiderstand Hochstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, junction to case thermal resistance, case to heatsink max. junction temperature operating temperature storage temperature Transistor / transistor, DC Transistor,DC,pro Zweig/per arm pro Modul / per Module pro Modul / per Module Transistor / transistor RthJC RthCK tvj max tc op tstg 0,016 0,032 0,008 150 -40...+125 -40...+125 C/W C/W C/W C C C Mechanische Eigenschaften / Mechanical properties Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlusse Gewicht internal insulation mounting torque terminal connection torque weight terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 G AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g Bedingung fur den Kurzschluschutz / Conditions for short-circuit protection tfg = 10 s VCC = 750 V vL = 15 V vCEM = 900 V RGF = RGR = 0,82 iCMK1 10000 A tvj = 125C iCMK2 8000 A Unabhangig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 15nH x |dic/dt| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. FZ 1200 R12 KF4 2500 2500 VGE=20V 15V 12V iC [A] 2000 iC [A] 2000 10V 1500 1500 9V 1000 1000 8V 500 500 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 FZ1200R12KF4 FZ1200R12KF4 Bild/Fig. 1 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V ----- T vj = 25 C ___ Tvj = 125 C 2500 t vj = 125 C 25 C 2500 Bild/Fig. 2 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) Tvj = 125 C iC [A] 2000 iC [A] 2000 1500 1500 1000 1000 500 500 0 5 6 7 8 9 10 v GE [V] 11 12 0 0 200 400 600 800 1000 1200 1400 FZ1200R12KF4 FZ1200R12KF4 v CE [V] Bild/Fig. 3 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V Bild/Fig. 4 Ruckwarts-Arbeitsbereich Reverse biased safe operating area tvj = 125 C, vLF = vLR = 15 V, RG = 0,82 FZ 1200 R12 KF4 10-1 2500 6 Z(th)JC [C/W] 3 2 Diode iF [A] 2000 IGBT 1500 10-2 1000 5 3 2 500 10-3 -3 10 2 4 10-2 2 4 10-1 2 4 100 2 4 101 0 0.5 FZ1200R12KF4 1.0 1.5 2.0 2.5 v F [V] 3.0 FZ1200R12KF4 t [s ] Bild/Fig. 5 Transienter innerer Warmewiderstand (DC) Transient thermal impedance (DC) Bild/Fig. 6 Durchlakennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 C tvj = 125 C Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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